Headquarter:

Optogan Oy
Tietotie 3
02150 Espoo
Finland

tel: +7812 3263285
email: info@optogan.com
www.optogan.com

Pilot Line:

Optogan GmbH
Konrad Adenauer Allee 11
44263 Dortmund
Germany

tel: +49 231 477 30400
fax: +49 231 477 30380

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Optogan‘s patent pending IP consists of

• unique in-situ epitaxial technology for growth of low dislocation density AlGaN/sapphire epilayers
• original III-nitride growth technology and LED epilayer structure with enhanced light generation capability
• a proprietary OptoGaN™ f-Power™ LED-chip design

OptoGaN’s proprietary LED epilayer structure combined with material quality superior then ever before used in mass production of GaN LEDs enable

• to minimize efficiency droop when driving GaN based LEDs at high current density
• to maintain reliable and long lasting operation at elevated current density and junction temperature

Company's proprietary f-Power™ chip design ensures uniform current distribution at current density in excess of 300 A/cm2 thus further enhancing device reliability.

Comparison between defect density in GaN/sapphire epilayers grown with conventional and OptoGaN technology: